Wide bandgap semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN) are revolutionizing power electronics, enabling higher efficiency, smaller size, and lower costs in applications like solar energy and electric vehicles. Testing systems utilizing these materials presents significant challenges. Higher switching frequencies introduce more electromagnetic interference and trigger parasitic effects in passive components. The wider range of voltages and current can be challenging to measure accurately while fast slew rates complicate the estimation of switching losses.
Comprehensive testing, including efficiency, ripple, and stability, is essential for validating these switched-mode power supplies. Detailed battery modeling and power consumption monitoring are also vital throughout the development process.
Rohde & Schwarz offers a complete suite of test and measurement (T&M) solutions to address these needs. From early-stage EMI debugging with fast oscilloscopes, to compliance testing using spectrum analyzers and EMI receivers, and component characterization with LCR meters, they cover the entire design lifecycle. Their high-voltage differential probes and power supplies – including dual-quadrant models for simulating real-world scenarios like battery systems – ensure accurate and reliable results. Rohde & Schwarz also provides solutions for production verification and field service, delivering performance and flexibility at every stage.
Rohde & Schwarz Benelux B.V. | Ptolemaeuslaan 900 | 3825 BV Utrecht | +31 30 600 1700 | [email protected]